Hot Electron Transistor with van der Waals Base-Collector Heterojunction and High-Performance GaN Emitter

Nano Letters, pp. 3089-3096, 2017.

Cited by: 13|Bibtex|Views14|DOI:https://doi.org/10.1021/acs.nanolett.7b00451
Other Links: academic.microsoft.com

Abstract:

Single layer graphene is an ideal material for the base layer of hot electron transistors (HETs) for potential terahertz (THz) applications. The ultrathin body and exceptionally long mean free path maximizes the probability for ballistic transport across the base of the HET. We demonstrate for the first time the operation of a high-perfor...More

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