Fabrication of Planar Back End of Line Compatible HfO$_x$ Complementary Resistive Switches
IEEE Transactions on Nanotechnology(2017)
摘要
This paper presents the fabrication, together with morphological and electrical characterizations of complementary resistive switches using the nanodamascene process. The as-fabricated devices are fully embedded in an insulating oxide, opening the way for further process steps such as three-dimensional monolithic integration. Complementary resistive switches electrical performance is consistent wi...
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关键词
Electrodes,Junctions,Hafnium compounds,Switches,Fabrication,Performance evaluation,Contacts
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