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SPICE modeling of RRAM thermal reset transitions for circuit simulation purposes

2017 Spanish Conference on Electron Devices (CDE)(2017)

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摘要
A physically based SPICE compact model for unipolar resistive memories is presented. The model includes ohmic and quantum conduction accounting for filamentary resistive switching operation. In addition, a detailed description of thermal effects is incorporated. Different types of conductive filaments (CFs) can be taken into consideration; in particular, tree-branch shaped filaments. The implementation in a circuit simulation tool has been performed in a modular and comprehensive manner. The reset transient response under voltage pulse operation is simulated and analyzed in depth taking into account the evolution of electric and thermal internal variables. The thermal inertia in the RRAM response has been considered and characterized.
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关键词
resistive switching,RRAMs,compact modeling,SPICE simulation,thermal capacitance
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