Interdigitated back contacted c-Si(p) solar cells with photovoltaic efficiencies beyond 22%
2017 Spanish Conference on Electron Devices (CDE)(2017)
摘要
In this work we show a baseline fabrication process of interdigitated back contacted IBC c-Si(p) solar cells, which combines conventional diffusion oven stages to define base p+ and emitter n
+
/n
++
regions at the back side, with outstanding front surface passivation using atomic layer deposited Al
2
O
3
films over random pyramids surfaces. Cells include a selective phosphorous n
++
emitter in order to improve contact resistance and simultaneously reduce recombination current density. Fabricated devices reach efficiencies up to 22.2% (AM1.5G 1 kW/m
2
, T=25°C). This value is so far the highest efficiency reported by any Spanish institution using silicon substrates. 3D simulations envisage efficiencies beyond 24% introducing little changes in the fabrication process.
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关键词
Interdigitated back-contacted solar cell,crystalline silicon,ALD Al2O3,passivation,high efficiency
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