MBE growth of few-layer 2H-MoTe 2 on 3D substrates

Journal of Crystal Growth(2018)

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摘要
•First, MBE growth of MoTe2 on CaF2.•First, grazing incidence and temperature dependent XRD on MBE grown 2H-MoTe2.•First work hypothesizing excess Te incorporation in MBE grown few-layer 2H-MoTe2.•First, compilation of lattice constants by several techniques on MBE 2H-MoTe2.•Controllability of 2D layers using RHEED oscillations is also presented here.
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关键词
A3. Molecular beam epitaxy,B1. Tellurites,B2. Semiconducting materials,A1. X-ray diffraction
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