Exploration of bulk and epitaxy defects in 4H-SiC using large scale optical characterization

In this work, aggregate epitaxial carrot distributions are observed at the crystal, wafer and dislocation defect levels, instead of individual extended carrot defect level. From combining large volumes of data, carrots are observed when both threading screw dislocations (TSD) and basal plane dislocations (BPD) densities are locally high as seen in full wafer maps. Dislocation density distributions in areas of carrot formation are shown, and suggest TSD limit the formation of carrots in regions containing BPD. These data also add support for mechanisms requiring the need for both dissociated BPD and TSD for carrot formation.