Study of etching processes for SiC defect analysis

Ping Wu,Xue Ping Xu,Ilya Zwieback,John Hostetler

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM)（2016）

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摘要

We investigated selective etching of SiC in molten KOH + NaOH + Na ₂ O ₂ mixtures in application to defect analysis. Etch rate was measured as a function of etchant composition, temperature and other process variables. Optimal etching conditions were established for reliable differentiation between TSDs, TEDs, BPDs and stacking faults (SF).

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关键词

KOH Etching,Etch Rate,Defects,Dislocations,Stacking Faults

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