Electrically driven deep ultraviolet lasers based on MgZnO thin films at room temperature

2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)(2017)

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摘要
Metal-semiconductor-metal devices were fabricated by utilizing MgZnO thin films to demonstrate random lasing in the deep ultraviolet wavelength range tuned by Mg content in the film. Room temperature lasing is realized in the wavelength range down to 284 nm.
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关键词
MgZnO thin films,metal-semiconductor-metal devices,random lasing,deep ultraviolet wavelength range,room temperature lasing,electrically driven deep ultraviolet lasers,wavelength 284.0 nm,temperature 293 K to 298 K,MgZnO
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