High-Performance GaN MOSHEMTs Fabricated With ALD Al 2 O 3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications

High-performance GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) using Al2O3 gate dielectric deposited by atomic layer deposition (ALD) and damage-free neutral beam etch (NBE) gate recess process for millimeter-wave power applications are demonstrated. The high-quality ALD Al2O3 reduces the gate leakage current of the device and the NBE method eliminates the plasma-indu...