Statistical study of RRAM MLC SET variability induced by filament morphology
2017 IEEE International Reliability Physics Symposium (IRPS)(2017)
摘要
This paper establishes the correlation between RRAM multilevel-cell (MLC) stochastic SET variability and random telegraph noise (RTN). We show that a smaller diameter (dD) of locally connecting/rupturing conductive filament (CF) and larger distance of gap (d
G
) between CF and electrode demonstrate both steeper Weibull slope β with a relaxed SET-disturb margin by 0.4 V and 36x improvement in RTN robustness. This is achieved by lower current compliances (I
coMp
) of 100 μA and larger RESET stopping voltage (V
reset
) of - 4.5 V for smaller d
D
and larger do with leaving less residual oxygen vacancies (Vo
+2
) in the gap region. Results from the Kinetic Monte Carlo (KMC) modeling also support these findings.
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关键词
RRAM,SET Variability,TDDB,RTN,Filament Morphology
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