Partial Local Density of States from Scanning Gate Microscopy
PHYSICAL REVIEW B(2017)
摘要
Scanning gate microscopy images from measurements made in the vicinity of quantum point contacts were originally interpreted in terms of current flow. Some recent work has analytically connected the local density of states to conductance changes in cases of perfect transmission, and at least qualitatively for a broader range of circumstances. In the present paper, we show analytically that in any time-reversal invariant system there are important deviations that are highly sensitive to imperfect transmission. Nevertheless, the unperturbed partial local density of states can be extracted from a weakly invasive scanning gate microscopy experiment, provided the quantum point contact is tuned anywhere on a conductance plateau. A perturbative treatment in the reflection coefficient shows just how sensitive this correspondence is to the departure from the quantized conductance value and reveals the necessity of local averaging over the tip position. It is also shown that the quality of the extracted partial local density of states decreases with increasing tip radius.
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Semiconductor Quantum Dots
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