Hardware implementation of physically unclonable function (puf) in perpendicular STT MRAM

2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)(2017)

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摘要
The pSTT MRAM array with stepped structure MTJ is fully integrated with standard 0.18 μm CMOS process. Using a low power etch process greatly improves the uniformity of MR and R P . The bit pattern is randomized with a voltage method and a cost-effective field method; the latter can be incorporated into wafer processing. We showed the bit pattern is unpredictable under the same sub-critical stimulation, thus, practically unclonable. The Hamming Weight and inter-chip Hamming Distance are both ~50%, an evidence of sufficient uniqueness. A single embedded STT-MRAM PUF can cover many needs of security electronics.
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关键词
physically unclonable function,hardware implementation,perpendicular STT MRAM,pSTT MRAM array,stepped structure MTJ,standard CMOS process,low power etch process,bit pattern,voltage method,cost-effective field method,wafer processing,Hamming weight,inter-chip Hamming distance,single embedded STT-MRAM PUF,security electronics,sub-critical stimulation,size 0.18 mum
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