Antibonding Holes Induce Good Thermoelectric Properties Ofp-Type Ca5Ga2As6

The arrangement of anionic tetrahedra in Zintl compounds plays a key role in determining their thermoelectric properties. We manifest this idea by investigating the crystal structure, electronic structure, and thermoelectric properties of the Zintl compounds Ca3GaAs3 and Ca5Ga2As6. By comparing various properties of Ca3GaAs3 and Ca5Ga2As6, we found that with decreasing calcium content from Ca3GaAs3 to Ca5Ga2As6, the two adjacent covalent chains formed by GaAs4 tetrahedra are connected by As-As bonds. In Ca5Ga2As6, the appearance of such As-As bonds not only supports the charge balance but also provides two nearly degenerate bands at the top of its valence bands. These two bands determine the thermoelectric behavior of p-type Ca5Ga2As6. The calculated band-decomposed charge density shows that the two bands have a pi* antibonding feature of the As pz orbital. Our calculations also reveal that the formation or nonformation of As-As bonds plays an important role in the difference in the thermoelectric properties between Ca3GaAs3 and Ca5Ga2As6. The optimal carrier concentration for achieving the highest thermoelectric performance was explored by calculating the trends in their thermoelectric properties with the carrier concentration. Our work may stimulate further experimental and theoretical work to increase understanding of Zintl chemistry and improve the thermoelectric performance of Zintl compounds.