Gate-Recessed Normally-OFF GaN MOSHEMT With Improved Channel Mobility and Dynamic Performance Using AlN/Si 3 N 4 as Passivation and Post Gate-Recess Channel Protection Layers

In this letter, a gate recessed normally-off GaN metal-oxide-semiconductor high-electron-mobility-transistor on silicon substrate is fabricated using AlN/Si3N4 as the passivation layer. The thin AlN layer serves the dual role of protecting the gate channel region from direct plasma bombardment during the RIE Si3N4 removal and passivating the surface states in the access region. As a result, the ef...