New-paradigm CMOS Ising computing for combinatorial optimization problems

2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)(2017)

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摘要
A new computing using Ising model that effectively solves combinatorial optimization problems is proposed. The computing maps problems to an Ising model, a model to express the behavior of magnetic spins, and solves the problems by its own convergence property. We fabricated a prototype computing chip and confirmed the power efficiency of the chip is 1800-times higher than that of the conventional von-Neumann computers.
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关键词
Ising model,combinatorial optimization problem,SRAM,non von-Neumann computing
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