DLTS measurements of p/n junction implanted with boron ions to n type Si substrateHiroki Wakimoto,Haruo Nakazawa,Takashi Matsumoto,Yoichi NabetaniThe Japan Society of Applied Physics(2017)引用 23|浏览7暂无评分关键词High-k DielectricsAI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要