Investigation of electron mobility and saturation velocity limits in gallium nitride using uniaxial dielectric continuum model

Journal of Applied Physics, pp. 2451092017.

Cited by: 1|Bibtex|Views0|DOI:https://doi.org/10.1063/1.4990424
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Abstract:

Here we introduce a uniaxial dielectric continuum model with temperature-dependent phonon mode frequencies to study temperature- and orientation-dependent polar-optical-phonon limited electron mobility and saturation velocity in uniaxial semiconductors. The formalism for calculating electron scattering rates, momentum relaxation rates, an...More

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