Static and low frequency noise characterization of ultra-thin body InAs MOSFETs

T. A. Karatsori,M. Pastorek,Christoforos G. Theodorou,A. Fadjie,N. Wichmann,L. Desplanque,X. Wallart,S. Bollaert,C. A. Dimitriadis,G. Ghibaudo

Solid-State Electronics（2018）

引用 5|浏览51

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摘要

•The electrical parameters of UTB InAs MOSFETs were investigated.•The drain current low-frequency noise in long-channel devices was also studied.•Lorentzian-like noise in the sub-micron area devices was also measured.

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关键词

Electrical characterization,III-V materials,InAs MOSFETs,Low-frequency noise,Random telegraph noise

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