High performance 14nm FinFET technology for low power mobile RF application

Eui-Young Jeong, Mingeun Song, Ilhyeon Choi,Huichul Shin, Jinhyeok Song,Wooyeol Maeng, Halim Park, Hyunki Yoon,Sungchul Kim, Sunny Park, Bong Ho You,Hag-Ju Cho, Young Chang An, Sung-Chul Lee,S. D. Kwon,Soon-Moon Jung

2017 Symposium on VLSI Technology（2017）

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摘要

RF-CMOS process employing 14nm FinFET technology is introduced for the first time and its RF performance is characterized. Compared with its 28nm planar counterpart, the optimized 14nm RF FinFET consumes 63% of DC power with 53% of device active area and 3.8 times higher intrinsic gain (gm/gds). Based on the 14 nm technology, VNCAP with higher cap density (8%) and Q-factor (23%) is also verified for mobile RF application.

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关键词

FinFETs,current gain cutoff frequency,intrinsic gain,power consumption,gate resistance,VNCAP

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