Modeling Of Charge And Photon Transport In Coupled Intracavity Light Emitters

To enable a more detailed analysis of our recent studies of intracavity double diode structures (DDSs), new simulation tools are needed. Such simulation models must account for both charge and photon transport in the studied structures, consisting of optically coupled AlGaAs/GaAs double heterojunction light emitting diode (LED) and GaAs p-n-homojunction photodiode (PD) structure, enclosed within a single semiconductor cavity. We apply the drift-diffusion formalism for charge transport and an optical model coupling the LED and the PD, with the aim of complementing our experimental work on the efficiency of these devices to understand better their suitability for electroluminescence cooling [1], and shedding further light on electroluminescence and optical energy transfer in the structures.