Voltage-controlled magnetic tunnel junction based MRAM for replacing high density DRAM circuits corresponding to 2X nm generation

Kazutaka Ikegami,Yoichi Shiota,Takayuki Nozaki,Keiko Abe,Hiroki Noguchi,Shinji Yuasa,Yutaka Suzuki,Shinobu Fujita

ieee international magnetics conference（2017）

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摘要

Voltage controlled magnetic tunnel junction (VC-MTJ) is fast as well as low power nonvolatile memory and it is expected to replace embedded (e-) working memory like SRAM.

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关键词

voltage-controlled magnetic tunnel junction,VC-MTJ based main memory,MRAM,high-density DRAM circuits,cache memory

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