Leveraging nMOS Negative Differential Resistance for Low Power, High Reliability Magnetic Memory

Shaodi Wang,Andrew Pan,Cecile Grezes,Pedram Khalili Amiri,Kang L. Wang,Chi On Chui,Puneet Gupta

IEEE Transactions on Electron Devices（2017）

引用 5|浏览29

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摘要

We propose, demonstrate, and assess a nontunneling-based nMOS voltage-controlled negative differential resistance (V-NDR) concept for overcoming the intrinsic efficiency and reliability shortcomings of magnetic random access memory memories (MRAM). Using nMOS V-NDR circuits in series with MRAM tunnel junctions, we experimentally observe 40 times reduction in current during switching, enabling writ...

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关键词

MOS devices,Resistance,Switches,Transistors,Reliability,Magnetic tunneling,Integrated circuit modeling

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