Low frequency noise in tunneling field effect transistors
Solid-State Electronics(2017)
摘要
•The low frequency noise in TFET is systematically investigated.•An analytical model for the fluctuation of the potential induced by a single charged trap in TFET is developed.•The available potential model of TFET is modified to be a more practical one.•A low frequency noise model in TFET is proposed.
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关键词
Tunneling field effect transistor (TFET),Interface trap,Potential model,Low frequency noise
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