Structural And Optical Characterization Of Algan Multiple Quantum Wells Grown On Semipolar (20-21) Bulk Aln Substrate

Heterostructures of AlGaN with multiple quantum wells were grown by metal-organic vapor phase epitaxy on semipolar (20-21) bulk AlN substrates. Smooth epitaxial surfaces with excellent heterostructure interfaces were demonstrated. Luminescence from the AlGaN multiple quantum wells emitting at lambda = 237 nm show a substantial degree of polarization of about 35% as determined by low-temperature photoluminescence measurements. Published by AIP Publishing.