A Si-Compatible Fabrication Process for Scaled Self-Aligned InGaAs FinFETs

Alon Vardi,Jianqiang Lin,Wenjie Lu,Xin Zhao,A. Fernando-Saavedra,J.A. del Alamo

IEEE Transactions on Semiconductor Manufacturing（2017）

引用 8|浏览28

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摘要

We have developed a scalable gate-last process to fabricate self-aligned InGaAs FinFETs that relies on extensive use of dry etch. The process involves F-based dry etching of refractory metal ohmic contacts that are formed early in the process. The fins are etched in a novel inductive coupled plasma process using BCl3/SiCl4/Ar. High aspect ratio fins with smooth sidewalls are obtained. To further i...

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关键词

CMOs technology,Indium gallium arsenide,FinFETs,Fabrication,III-V semiconductor materials,Gate leakage

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