Effects Of Gamma Irradiation On Algan-Based High Electron Mobility Transistors

The influence of various radiations on the performance and carrier transport properties of AlGaN/GaN HEMTs have been observed at length over the previous few decades. Gamma irradiation has been shown to have little influence on carrier density but has significant effects on device performance. The effects of gamma irradiation have proven non-monotonic in nature, dividing results into low and high doses with an inflection point near 300 Gy. Low doses of gamma irradiation have a tendency to improve device characteristics, while high doses lead to device degradation. The differences in low versus high doses are highlighted by electron beam induced current and dc characterizations. The variance in behavior originates from irradiation-induced trap generation and subsequent trap occupation from Compton scattering. AlGaN/GaN-based HEMTs have shown carrier transport enhancement for low doses. (c) The Author(s) 2017. Published by ECS. All rights reserved.