Linearity And Dynamic Range Of Carbon Nanotube Field-Effect Transistors

We examine the problem of optimizing the linearity and dynamic range of a FET device, with application to carbon-nanotube (CNT) FETs. To develop insight into the way FET parameters affect linearity, we derive expressions for noise figure, intermodulation distortion, and dynamic range of a FET described by a unilateral equivalent circuit. This exercise identifies criteria for optimizing linearity and comparing the linearity of dissimilar devices. Measurements prove that CNT devices are significantly more linear than modern microwave FETs.