Reduction of Specific Contact Resistance on n-Type Implanted 4H-SiC Through Argon Inductively Coupled Plasma Treatment and Post-Metal Deposition Annealing
IEEE Electron Device Letters（2017）
摘要
The effects of Ar inductively coupled plasma (ICP) treatment on the Ohmic contact on n+-implanted SiC were investigated in this letter. The effects of ICP treatment were negligible on the Ni-silicide contact, because the treated surface layer was consumed during silicide formation. However, for the Ti contact, as the annealing temperature increased, the ion-bombardment-induced damage layer transfo...
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关键词
Annealing,Iterative closest point algorithm,Silicon carbide,Ohmic contacts,Atomic layer deposition,Plasmas,Surface treatment
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