High-speed pulse response of asymmetric-dual-grating-gate high-electron-mobility-transistor for plasmonic THz detection

Asymmetric-dual-grating-gate high-electron-mobility-transistors (ADGG-HEMTs) are expected for on-chip, sensitive, room-temperature operating, high-speed THz detectors. In this paper, we experimentally verify the high-speed response of an ADGG-HEMT by measuring its response to THz pulse generated from an injection-seeded THz-wave parametric generator (is-TPG). From the pulse response waveform of the output photovoltage signal, it is demonstrated that the response time of the detector at least as fast as 100 ps.