TEM Applications for III-V Material Analysis

2017 IEEE 24TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA)（2017）

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Abstract

The application of techniques utilizing transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM) and energy dispersive spectroscopy (EDS) to identify the interface and defect property in GaN based materials is presented. Several parameters including STEM camera length and probe size were demonstrated to have significantly influence on image contrast and layer thickness, respectively. The dislocation, localized strain and polarity of GaN were also reviewed in this work By choosing the optimized parameters, rapid and accurate analysis of detail structural and electronic information could be obtained.

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Key words

TEM applications,III-V material analysis,transmission electron microscopy,energy dispersive spectroscopy,defect property,GaN based materials,probe size,image contrast,layer thickness,localized strain,optimized parameters,electronic information,interface property,STEM camera length,dislocation,structural information,EDS,GaN

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