GaN DHFETs Having 48% Power Added Efficiency and 57% Drain Efficiency at $V$ -Band

We report the state-of-the-art V-band power performance of a scaled 40-nm gate length Al0.23Ga0.77N/AlN/GaN/Al0.08Ga0.92N double heterojunction field effect transistor (DHFET). The 200 μm (4 × 50 μm) wide GaN DHFETs pre-matched for V-band (57-64 GHz) have demonstrated an output power of 376 mW (1.88 W/mm) with 48% power-added efficiency (PAE), 57% drain efficiency, and more than 8 dB of associated...