Enhanced nFinFET ESD performance

Jian-Hsing Lee,Manjunatha Prabhu,Natarajan Mahadeva Iyer,Edmund Kenneth Banghart,You Li, Ronghua Yu, Richard Poro, Nicholas Hogle, Ephrem Gebreselaie,Shesh Mani Pandey,Robert J. Gauthier

2017 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)（2017）

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摘要

A very simple and useful scheme to enhance the ESD performance of the nFinFET is proposed. By incorporating the N-Well (NW) with the nFinFET, it becomes a low holding-voltage SCR if the NW contact is ohmic and becomes a high holding-voltage SCR if the NW contact is a Schottky contact.

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关键词

nFinFET ESD performance,low holding-voltage SCR,NW contact,high holding-voltage SCR,ohmic contact,Schottky contact

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