Diffusion Of Minority Carriers Against Electric Field (High Injection Level)

A one-dimensional analytic model describing the motion of minority carriers against the electric field direction under the conditions of high injection level is developed. The results of the model can also be used to estimate the motion of carriers against the field in the case of an arbitrary injection level. The model makes it possible to describe, in good agreement with the results of computer simulation, the modulation of the collector layer resistance in a high voltage SiC bipolar transistor. Published by AIP Publishing.