Ultra-Low Standby Power And Static Noise-Immune Standard Ternary Inverter Based On Nanoscale Ternary Cmos Technology

We demonstrate ternary CMOS (T-CMOS)based standard ternary inverter (STI) for compact and power scalable multi-valued logic (MVL) circuits. The distinguished mechanism of VG-independent junction band-to-band tunneling (BTBT) for ternary logic has been successfully obtained by CMOS process with a few pA/mu m level which enables STI operation with ultra-low static power consumption of 7.7 pW/mu m. Through the STI performance investigation with various T-CMOS structures by using TCAD simulation, advanced nanoscale bulk tri-gate (TG) ternary FinFET (T-FinFET) shows highly noise-immune STI operation with a larger static noise margin (SNM) of 94% to the ideal SNM (230mV) than 86% of bulk planar T-CMOS and 75% of SOI T-CMOS technology.