Materials and processing issues in vertical GaN power electronics

Materials Science in Semiconductor Processing, pp. 75-84, 2017.

Cited by: 3|Bibtex|Views1|DOI:https://doi.org/10.1016/j.mssp.2017.09.033
Other Links: academic.microsoft.com

Abstract:

Abstract Silicon-based power devices are reaching their fundamental performance limit. The use of wide-bandgap semiconductors with superior material properties over silicon offers the potential for power electronic systems with much higher power densities and higher conversion efficiency. GaN, with a high critical electric field and car...More

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