Materials and processing issues in vertical GaN power electronics
Materials Science in Semiconductor Processing, pp. 75-84, 2017.
Abstract Silicon-based power devices are reaching their fundamental performance limit. The use of wide-bandgap semiconductors with superior material properties over silicon offers the potential for power electronic systems with much higher power densities and higher conversion efficiency. GaN, with a high critical electric field and car...More
Full Text (Upload PDF)
PPT (Upload PPT)