Antimony Based Mid-Infrared Semiconductor Materials And Devices Monolithically Grown On Silicon Substrates
30TH ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC)(2017)
摘要
III-V semiconductor heterostructures grown on GaSb and InAs substrates are widely used to produce high performance optoelectronic devices operating in the technologically important mid-infrared spectral range. However, these substrates are expensive, only available in small sizes and have low thermal conductivity. Integration of III-Vs onto silicon substrates offers the opportunity to overcome these shortcomings and opens the possibility of new applications in lab-on-chip MIR photonic integrated circuits. However, the unusual III-V/Si interface and large lattice mismatch presents challenges to epitaxial growth. Here, we report on novel techniques employed to grow high quality Sb-based optoelectronic devices on silicon using molecular beam epitaxy.
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关键词
GaSb, Molecular Beam Epitaxy, Mid-infrared
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