Predicting Muon-Induced SEU Rates for a 28-nm SRAM Using Protons and Heavy Ions to Calibrate the Sensitive Volume Model

Muon-induced single-event upset cross sections are estimated for a 28-nm static random access memory (SRAM) using Monte Carlo simulations informed by ion test results. As an exercise in modeling with limited information, details of the 28-nm SRAM's cell structure were not used (and not available) to inform choices of device model parameters such as sensitive volume dimensions and efficiencies. Ins...