Interdigitated back-contacted crystalline silicon solar cells with low-temperature dopant-free selective contacts
JOURNAL OF MATERIALS CHEMISTRY A(2018)
摘要
In the field of crystalline silicon solar cells, great efforts are being devoted to the development of selective contacts in search of a fully low-temperature and dopant-free fabrication process compatible with high photovoltaic conversion efficiencies. For high-efficiency devices, selective contacts have to simultaneously combine high conductivity with excellent passivating properties. With this objective, a thin passivating extra layer of a-Si: H or SiO2 is usually introduced between the conducting layer and the silicon substrate. In this work, we present an interdigitated back-contacted (IBC) silicon based solar cell that avoids the use of either thermal SiO2 or a-Si: H interlayers achieving a dopant-free, ITO-free and very low thermal budget fabrication process. In this work, we propose a new electron transport layer using ultrathin Al2O3/TiO2 stacks deposited by atomic layer deposition at 100 degrees C covered with a thermally evaporated Mg capping film. A specific contact resistance of 2.5 mU cm(2) has been measured together with surface recombination velocities below 40 cm s(-1). This electron-selective contact is combined with a thermally evaporated V2Ox-based hole selective contact to form the rear scheme of an IBC structure with a 3 x 3 cm(2) active area as a proof-of-concept resulting in efficiencies beyond 19%. This approach sheds light on potential technological simplification and cost reduction in crystalline silicon solar cells.
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