In0.83Ga0.17As photodetectors with different doping concentrations in the absorption layers

X.Y. Chen,Y. Gu,Y.G. Zhang, Y.J. Ma,B. Du,H.Y. Shi, W.Y. Ji,Y. Zhu

Infrared Physics & Technology（2018）

引用 5|浏览29

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摘要

•The features of In0.83Ga0.17As PDs with 8E15 and 4E16 doping were investigated.•The PDs with low doping showed much better performance at lower temperature.•Trap-assisted-tunneling current was reduced due to lower silicon doped level.•The temperature-dependences of dark currents were analyzed in detail.

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关键词

InGaAs,Wavelength-extended,Photodetector,Dark current

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