Investigation on Carrier Transport Through AlN Nucleation Layer From Differently Doped Si(111) Substrates

To get a better insight into the vertical leakage mechanism of GaN-on-Si, the carrier transport from n+, n, p+, and p-Si(111) substrates through the AlN nucleation layer was investigated. A plateau in the current-voltage curve was found only for the AlN/p-Si heterojunction due to depletion of the p-Si substrate. Detailed study illustrated that it was the leaky AlN that cannot effectively block the...