Radiation hardness of Kr+ ion implanted BaWO4 at room temperature

Single crystalline 〈100〉 oriented BaWO4 was implanted at room temperature with 370 keV Kr ions and ion fluences ranging from 1 × 1012 to 4 × 1016 ions/cm2. The damage built-up during implantation was investigated by quasi in situ Rutherford backscattering spectrometry in channelling configuration (RBS/C) using a two-beam chamber. Up to the highest ion fluence applied no amorphization is observed indicating that BaWO4 has a high resistance to amorphization by ion irradiation. The shape of the RBS/C spectra indicates the existence of extended defects. Damage formation in the bulk proceeds in two steps, which can be attributed to formation and recombination of point defects and formation and growth of defect clusters including extended defects. Additionally a significant damage accumulation at the surface is observed. Some damage recovery occurs after annealing up to 600 °C. Although after annealing at 700 °C the amount of damage drastically decreased, complete damage recovery could not be obtained.