A Diamond:H/WO3 Metal-Oxide-Semiconductor Field-Effect Transistor

Zongyou Yin,Moshe Tordjman,Alon Vardi,R. Kalish,Jesus A. del Alamo

IEEE Electron Device Letters（2018）

引用 33|浏览13

暂无评分

摘要

A p-type Diamond:H/WO3 metal-oxide-semiconductor field-effect transistor (MOSFET) based on surface transfer doping is demonstrated. Using a low-temperature ALD-grown HfO2 as gate insulator, the Diamond:H/WO3 MOSFETs show excellent output characteristics, gate-controllable 2-D hole gas, and low gate leakage current. Long-channel FETs exhibit improved subthreshold behavior but reduced transconductan...

查看译文

关键词

Logic gates,Temperature measurement,MOSFET,Diamond,Doping,Fabrication

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要