A Physics-Based Compact Model for Transition-Metal Dichalcogenides Transistors With the Band-Tail Effect
IEEE Electron Device Letters(2018)
摘要
Due to structural disorder effects, variable range hopping (VRH) transport via band-tail states has been widely observed in the transition-metal dichalcogenide field-effect transistor (TMD FET). However, this significant mechanism has not been incorporated into existing compact models. In this letter, a continuous physics-based compact model considering VRH in TMD FET is developed. Key parameters ...
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关键词
Integrated circuit modeling,Quantum capacitance,Field effect transistors,Molybdenum,Sulfur,Logic gates
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