Sub-100 nm 2 Cobalt Interconnects

IEEE Electron Device Letters(2018)

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摘要
Co has elicited a strong interest to replace Cu for future interconnect applications in microelectronic circuits due to its potentially lower resistivity and better reliability at scaled dimensions. Here, we demonstrate Co wires with electrical cross-sectional areas as small as 34 nm2 using a simple subtractive patterning technique. Semiclassical resistivity modeling of the wire resistivity indica...
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关键词
Wires,Conductivity,Scattering,Integrated circuit interconnections,Nanowires,Semiconductor device reliability
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