Impact Of Device Parameters On Performance Of One-Port Type Saw Resonators On Ain/Sapphire

We have studied the impact of various device parameters including surface acoustic wavelength (lambda, interdigital transducers (IDT) finger apertures (Li-IDT, number of reflector gratings (N-Nef), and reflector types on the performance of one-port type AIN based SAW resonators on sapphire systematically. Experimental results indicate that the acoustic velocity of 1 mu m-AIN-sappire bilayer structure is 5536 m s (-1), 60% higher than that of LiNbCO3 when lambda is 8 mu m. For 1 mu m-AlN/sapphire bilayer structure, resonators with lambda of 8 mu m exhibit better performance than that of resonators with lambda of 12 p mu and 16 p mu, with an electromechanical coupling coefficient (KK2) of 0.168%, and S-11 magnitude difference at resonant and antir-esonant frequency (Delta S-11 of 0.42 dB. Both Delta(11)and K-t(2) of resonators will increase sharply with (th increase of L(IDT)from 80 mu m to 240 mu m, exhibiting 140% and 150% improvement, respectively. The K(t)of resonators will increase 38% with the increase of N-ref from 100 to 300. The impact of reflector types including open-circuited and short-circuited reflectors on performance of resonators is not obvious.