On-Chip Integration of GaN-Based Laser, Modulator, and Photodetector Grown on Si

A preliminary on-chip integration of GaN-based laser, modulator, and photodetector grown on Si is reported. The modulator is integrated into the laser and shares the same InGaN quantum well active region with the laser and the photodetector. By varying the applied voltage to the modulator, the absorption of the modulator can be adjusted due to the changed band bending of the InGaN quantum well act...