Atomically Thin CBRAM Enabled by 2-D Materials: Scaling Behaviors and Performance Limits

IEEE Transactions on Electron Devices(2018)

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摘要
Reducing the energy and power dissipation of conductive bridge random access memory (CBRAM) cells is of critical importance for their applications in future Internet of Things (IoT) device and neuromorphic computing platforms. Atomically thin CBRAMs enabled by 2-D materials are studied theoretically by using 3-D kinetic Monte Carlo simulations together with experimental characterization. The resul...
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关键词
Switches,Atomic layer deposition,Metals,Electrodes,Solid modeling,Graphene,Computational modeling
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