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A novel SOI LDMOS with substrate field plate and variable-k dielectric buried layer

Results in Physics(2018)

Cited 9|Views9
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Abstract
•A LDMOS with substrate field plate and variable-k dielectric layer is proposed.•The substrate field plate is connected to the substrate through the silicon window.•The BV is dramatically improved due to the electric field modulation of SFP and VKBL.•The auxiliary depletion effect of SFP effectively reduces the Ron,sp.•The substrate field plate alleviates the self-heating effect.
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Key words
SOI LDMOS,Field plate,Variable-k dielectric,Breakdown voltage,Specific ON-resistance
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