Electromigration Characteristics and Morphological Evolution of Cu Interconnects on CVD Co and Ru Liners for 10-Nm Class VLSI Technology
IEEE electron device letters(2018)
摘要
Ruthenium (Ru) and cobalt (Co) are new candidates for the replacement of physical vapor deposition tantalum (Ta) in liner materials because Ru and Co have excellent Cu-filling properties when deposited using chemical vapor deposition (CVD). Under accelerated current stressing conditions, Cu interconnects on a TaN/Co barrier showed an abrupt increase in resistance. The Cu resistance on a TaN/Ru barrier increased gradually and saturated with low deviation because voids generated randomly, and the Cu that remained on the Ru in the voids acted as shunt layers, preventing a sudden increase in resistance. Cu evolution tests on a Ru liner indicated that Cu had a strong bond with CVD Ru liner, even at high temperatures. These results suggest that Cu deposited on a TaN/ Ru barrier can endure electromigration failure.
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关键词
Copper,ruthenium,cobalt,electromigration (EM),interconnects,CVD liner
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