Light Extraction Efficiency Analysis of Flip-Chip Ultraviolet Light-Emitting Diodes With Patterned Sapphire Substrate
IEEE Photonics Journal（2018）
摘要
This study investigates polarization-dependent light extraction efficiency (ηextraction ) of AlGaN-based flip-chip ultraviolet (UV) light-emitting diodes (LEDs) emitting at 230 nm and 280 nm with microdome-shaped patterning on sapphire substrate based on 3-D finite-difference time-domain simulations. Three types of patterned sapphire substrates (PSS) have been analyzed: bottom-side PSS, top-side P...
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关键词
Light emitting diodes,Substrates,Aluminum gallium nitride,Wide band gap semiconductors,Flip-chip devices,Finite difference methods,Photonics
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